Johannes Jobst

 Jobst Johannes


Work address

Huygens Laboratory, Niels Bohrweg 2,  2333 CA Leiden
Room number HL602



Phone: +31 71 527 5420
Cell: +31-649588920
E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.


You find detailed information on my research webpage, Research Gate and LinkedIn.



Scientific CV

From 11.2015 Postdoctoral VENI scholar at Leiden University and Columbia University, New York
10.2013-10.2015 Postdoctoral Researcher at Leiden University in the group of Prof. Dr. Sense Jan van der Molen
04.2015 Research Stay at Columbia University, New York (Prof. Cory Dean)
01.2013-04.2013     Postdoctoral Researcher at FAU Erlangen-Nuremberg in the group of Prof. Dr. Heiko B. Weber
02.2008-12.2012  PhD student at FAU Erlangen-Nuremberg `Quantum Transport in Epitaxial Graphene on Silicon Carbide (0001)'
04.2010 Research stay at `School of Electrical and Computer Engineering' at Cornell University (Prof. Michael Spencer)
06.2009 Research stay at `Laboratoire National des Champs Magnetique Intenses' (Grenoble High Magnetic Field Laboratory) in Grenoble
03.2004-12.2007 Studying Physics at FAU Erlangen-Nuremberg Diploma thesis: `Electron Transport in Graphene on 6H Silicon Carbid: An Investigation with Hall-Effect and Conductivity Measurements'
08.2006 Research project: Investigation of Channeling in Silicon Carbide by Rutherford Backscattering
10.2003-03.2004 Studying Physics at Free University Berlin
09.1994-06.2003 Hardenberg-Gymnasium Fürth


Awards and Grants


Fields of Expertise

  • Electronic transport: low temperatures, high magnetic fields, coherent phenomena
  • Surface science: LEEM, SEM, XPS, AFM
  • Sample fabrication: graphene growth, electron beam lithography, evaporation & sputtering, ion implantation


List of Publications

  • J. Jobst, J. Kautz, D. Geelen, R.M. Tromp & S.J. van der Molen, Nanoscale measurements of unoccupied band dispersion in few-layer graphene. Nature Communications 6, 8926 (2015).
  • J. Kautz*, J. Jobst*, C. Sorger, R.M. Tromp, H.B. Weber & S.J. van der Molen, Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale. Scientific Reports 5, 13604 (2015).
  • J. Kautz, J. Jobst & S.J. van der Molen, Quantum LEEP (Lage-energie-elektronenpotentiometrie): Spanning op de Nanoschaal!, Nevac blad 53 (2)(7) (2015).
  • C. Sorger, S. Hertel, J. Jobst, C. Steiner, K. Meil, K. Ullmann, A. Albert, Y. Wang, M. Krieger, J. Ristein, S. Maier & H.B. Weber, Gateless patterning of epitaxial graphene by local intercalation. Nanotechnology 26, 025302 (2015).
  • J. Jobst, F. Kisslinger & H.B. Weber, Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies. Physical Review B 88, 155412 (2013).
  • S. Shivaraman*, J. Jobst*, D. Waldmann, H.B. Weber & M.G. Spencer, Raman Spectroscopy and Electrical Transport Studies of Free-Standing Epitaxial Graphene: Evidence of an AB stacked Bilayer. Physical Review B 87, 195425 (2013).
  • D. Waldmann, B. Butz, S. Bauer, J.M. Englert, J. Jobst, K. Ullmann, F. Fromm, M. Ammon, M. Enzelberger, A. Hirsch, S. Maier, P. Schmuki, T. Seyller, E. Spiecker & H.B. Weber, Robust Graphene Membranes in a Silicon Carbide Frame. ACS Nano 7, 4441 (2013).
  • S. Hertel, D. Waldmann, J. Jobst, S. Reshanov, A. Schöner, M. Krieger & H.B. Weber, Tayloring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nature Communications 3, 957 (2012).
  • J. Jobst & H.B. Weber, Origin of logarithmic resistance correction in graphene. Nature Physics 8, 352 (2012).
  • J. Jobst, D. Waldmann, I.V. Gornyi, A.D. Mirlin & H.B. Weber, Electron-Electron Interaction in the Magnetoresistance of Graphene. Physical Review Letters 108, 106601 (2012).
  • D. Waldmann, J. Jobst, F. Fromm, F. Speck, Th. Seyller, M. Krieger & H.B. Weber, Implanted bottom gate for epitaxial graphene on silicon carbide. Journal of Physics D: Applied Physics 45, 154006 (2012).
  • F. Krach, S. Hertel, D. Waldmann, J. Jobst, M. Krieger, S. Reshanov, A. Schöner & H.B. Weber, A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel. Applied Physics Letters 100, 122102 (2012).
  • F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Hundhausen, H.B. Weber & Th. Seyller, The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters 99, 122106 (2011).
  • D. Waldmann, J. Jobst, F. Speck, Th. Seyller, M. Krieger & H.B. Weber, Bottom-gated epitaxial graphene. Nature Materials 10, 357 (2011).
  • S. Hertel, F. Kisslinger J. Jobst, D.Waldmann, M. Krieger & H.B.Weber, Current annealing and electrical breakdown of epitaxial graphene. Applied Physics Letters 98, 212109 (2011).
  • J. Jobst, D. Waldmann, F. Speck, R. Hirner, D.K. Maude, Th. Seyller & H.B. Weber, Quantum oscillations and quantum Hall effect in epitaxial graphene. Physical Review B 81, 195434 (2010).
  • K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, J. Röhrl, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber & Th. Seyller, Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials 8, 203 (2009).


Conference Proceedings

  • D. Waldmann, J. Jobst, F. Speck, Th. Seyller, M. Krieger & H.B. Weber, Gated Epitaxial Graphene Devices. Materials Science Forum 717-720, 675 (2012).
  • J. Jobst, D. Waldmann, F. Speck, R. Hirner, D.K. Maude, Th. Seyller & H.B. Weber, Transport properties of high-quality epitaxial graphene on 6H-SiC(0001). Solid State Communications 151, 1061 (2011).
  • F. Speck, M. Ostler, J. Röhrl, J. Jobst, D. Waldmann, M. Hundhausen, L. Ley, H.B. Weber & Th. Seyller, Quasi-freestanding Graphene on SiC (0001). Materials Science Forum 645-648, 629 (2010).
  • J. Jobst, D. Waldmann, F. Speck, R. Hirner, D.K. Maude, Th. Seyller & H.B. Weber, Transport properties of single-layer epitaxial graphene on 6H-SiC(0001). Materials Science Forum 645-648, 637 (2010).


Patent Applications

  • H.B. Weber; M. Krieger; S. Hertel; F. Krach; J. Jobst; D. Waldmann: ELECTRONIC DEVICE, WO Patent WO/2012/171665, priority 17.06.2011, published 20.12.2012, IPC: H01L 29/47, H01L 21/02, H01L 21/04, H01L 21/329, H01L 21/338, H01L 21/82, H01L 27/06, H01L 27/105, H01L 29/417, H01L 29/423, H01L 29/45, H01L 29/812, H01L 29/872.
  • H.B. Weber; M. Krieger; S. Hertel; F. Krach; J. Jobst; D. Waldmann: SEMICONDUCTOR COMPONENT, WO Patent WO/2012/139710, priority 13.04.2011, published 18.10.2012, IPC: H01L 29/45, G01N 27/414, H01L 29/78, H01L 29/16.